WithTi doping, the transmittance of indium-tin-oxide (ITO) thin film is greatly enhanced in near the ultraviolet (UV) range. After annealing at 500 °C in vacuum, the transmittance of Ti-doped
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Dopingwith tin increases the oxygen/cation ratio and the lattice parameter and decreases the Sn-O distances, which disorders the host network. The low-conduction In Sn O 12 4 Sn 3 O 12 is rhombohedral (space group R 3, a =9.4604 (2) Å, and c = 8.8584 (2) Å in a hexagonal basis). There is a cation ordering with octahedral sites fully
Abstractand Figures. In this paper we report on the effects of the insertion of Cr atoms on the electrical and optical properties of indium tin oxide (ITO) films to be used as electrodes in spin
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